may 2011 doc id 018870 rev 1 1/14 14 STL13NM60N n-channel 600 v, 0.320 , 10 a powerflat? (8x8) hv mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this device is a n-channel power mosfets made using the second generation of mdmesh? technology. this revolutionary transistor associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d STL13NM60N 650 v < 0.385 10 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0 o w e r & |